The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes a semiconductor substrate, a plurality of field oxide films formed in predetermined regions on the semiconductor substrate, a gate formed in a predetermined region on the semiconductor substrate between the field oxide films, a well pick-up region formed in a predetermined region on the semiconductor substrate between the field oxide films, a source formed in a predetermined region on the semiconductor substrate between the field oxide film and the gate, a drain drift region formed in a predetermined region on the semiconductor substrate between the gate and the field oxide film, a drain active region of a concentration higher than that of the drain drift region, the drain active region being formed in the drain drift region, and an oxide film formed on the semiconductor substrate on a boundary of the drain drift region and the drain active region. Accordingly, the current concentrated on the surface of the device can be uniformly distributed over the entire device.