发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US11714766申请日: 2007-03-07
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公开(公告)号: US07362630B2公开(公告)日: 2008-04-22
- 发明人: Kaoru Mori , Yoshiaki Okuyama
- 申请人: Kaoru Mori , Yoshiaki Okuyama
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Arent Fox, LLP.
- 优先权: JP2005-191333 20050630
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
In order to give all memory blocks the same structure, a redundancy word line and a redundancy bit line are formed in each memory block. A redundancy column selection line is wired in common to the memory blocks. Column redundancy circuits are formed to correspond to respective memory groups each of which consists of a prescribed number of memory blocks, and become effective according to enable signals. A column redundancy selection circuit activates an enable signal according to a block address signal when all row hit signals are deactivated. When one of the row hit signals is activated, the column redundancy selection circuit activates the enable signal corresponding to the activated row hit signal. Since the column redundancy circuit for an arbitrary memory group can be made effective according to the row hit signals, failure relief efficiency can be increased without deteriorating the electric characteristic during an access operation.
公开/授权文献
- US20070195620A1 Semiconductor memory 公开/授权日:2007-08-23
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