发明授权
- 专利标题: Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
- 专利标题(中): 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法
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申请号: US11296704申请日: 2005-12-08
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公开(公告)号: US07364940B2公开(公告)日: 2008-04-29
- 发明人: Joo Young Kim , Eun Kyung Lee , Bang Lin Lee , Bon Won Koo , Hyun Jung Park , Sang Yoon Lee
- 申请人: Joo Young Kim , Eun Kyung Lee , Bang Lin Lee , Bon Won Koo , Hyun Jung Park , Sang Yoon Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2005-0001759 20050107
- 主分类号: H01L51/40
- IPC分类号: H01L51/40
摘要:
An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.
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