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    Organic thin film transistor
    2.
    发明授权
    Organic thin film transistor 有权
    有机薄膜晶体管

    公开(公告)号：US08373161B2

    公开(公告)日：2013-02-12

    申请号：US13346119

    申请日：2012-01-09

    申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0533

    摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

    摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

    Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor
    3.
    发明申请
    Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor 有权
    电气设备制造方法，电气设备阵列及其制造方法

    公开(公告)号：US20130001554A1

    公开(公告)日：2013-01-03

    申请号：US13173986

    申请日：2011-06-30

    申请人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    发明人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    IPC分类号： H01L29/12 ,  H01L21/66 ,  H01L51/30

    CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0541 ,  H01L51/0545

    摘要： An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

    摘要翻译： 示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

    Organic Semiconductor Compound, And Transistor And Electronic Device Including The Same
    4.
    发明申请
    Organic Semiconductor Compound, And Transistor And Electronic Device Including The Same 有权
    有机半导体复合物，晶体管和包括其的电子器件

    公开(公告)号：US20120168729A1

    公开(公告)日：2012-07-05

    申请号：US13349141

    申请日：2012-01-12

    申请人： Jeong-il Park ,  Bang Lin Lee ,  Jong Won Chung

    发明人： Jeong-il Park ,  Bang Lin Lee ,  Jong Won Chung

    IPC分类号： H01L51/10 ,  C08F128/06 ,  C07D513/06 ,  C07D495/06

    CPC分类号： C07D513/06 ,  C07D495/06 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0558

    摘要： An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R1 to R3 connected to a first benzene ring and with functional groups R4 to R6 connected to a second benzene ring. The base structure's third and fourth benzene rings are connected to X1, X2 and X3, X4 respectfully. At least one of X1 and X2 is a sulfur atom. At least one of X3 and X4 is a sulfur atom. The base structure further includes functional groups R7 and R8.

    摘要翻译： 示例性实施方案涉及可以在晶体管和电子器件中聚合和使用的由本文化学式1表示的有机半导体化合物。 有机半导体化合物包括具有与第一苯环连接的官能团R 1〜R 3以及与第二苯环连接的官能团R4〜R6的四个稠合苯环的基本结构。 基础结构的第三和第四苯环相互连接X1，X2和X3，X4。 X1和X2中的至少一个是硫原子。 X3和X4中的至少一个是硫原子。 碱基结构还包括官能团R7和R8。