Invention Grant
- Patent Title: Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
- Patent Title (中): 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法
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Application No.: US11296704Application Date: 2005-12-08
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Publication No.: US07364940B2Publication Date: 2008-04-29
- Inventor: Joo Young Kim , Eun Kyung Lee , Bang Lin Lee , Bon Won Koo , Hyun Jung Park , Sang Yoon Lee
- Applicant: Joo Young Kim , Eun Kyung Lee , Bang Lin Lee , Bon Won Koo , Hyun Jung Park , Sang Yoon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0001759 20050107
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.
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