发明授权
- 专利标题： Circuit device manufacturing method
- 专利标题（中）： 电路器件制造方法
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申请号： US11207293申请日： 2005-08-19
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公开(公告)号： US07364941B2公开(公告)日： 2008-04-29
- 发明人: Ryosuke Usui , Hideki Mizuhara , Yusuke Igarashi , Noriaki Sakamoto
- 申请人： Ryosuke Usui , Hideki Mizuhara , Yusuke Igarashi , Noriaki Sakamoto
- 申请人地址： JP Osaka JP Gunma
- 专利权人： Sanyo Electric Co., Ltd.,Kanto SANYO Semiconductors Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.,Kanto SANYO Semiconductors Co., Ltd.
- 当前专利权人地址： JP Osaka JP Gunma
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2002-352141 20021204
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L23/02
摘要：
A circuit device manufacturing method is provided, wherein the adhesion of an overcoat resin, formed on a conductive wiring layer, to a sealing resin layer is improved by irradiating plasma onto the overcoat resin. A first conductive film 23A and a second conductive film 23B, which are laminated with an interlayer insulating layer 22 interposed in between, are formed. By selectively removing the first conductive film, a first conductive wiring layer 12A is formed and the first conductive wiring layer is covered with an overcoat resin 18. Overcoat resin 18 is irradiated with plasma to roughen its top surface. A sealing resin layer 17 is formed so as to cover the top surface of the roughened overcoat resin 18 and circuit elements 13.
公开/授权文献
- US20060032049A1 Circuit device manufacturing method 公开/授权日：2006-02-16
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