发明授权
- 专利标题： Strain control of epitaxial oxide films using virtual substrates
- 专利标题（中）： 使用虚拟衬底的外延氧化膜的应变控制
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申请号： US11174350申请日： 2005-07-01
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公开(公告)号： US07364989B2公开(公告)日： 2008-04-29
- 发明人: Douglas J. Tweet , Yoshi Ono , David R. Evans , Sheng Teng Hsu
- 申请人： Douglas J. Tweet , Yoshi Ono , David R. Evans , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si1-xGex and Si1-yCy on the silicon substrate; adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer; depositing a single-crystal, epitaxial oxide film, by atomic layer deposition, taken from the group of oxide films consisting of perovskite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, on the silicon alloy layer; and completing a desired device.
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