发明授权
- 专利标题: Method for producing a spin valve transistor with stabilization
- 专利标题(中): 用于制造具有稳定性的自旋阀晶体管的方法
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申请号: US11340263申请日: 2006-01-25
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公开(公告)号: US07367111B2公开(公告)日: 2008-05-06
- 发明人: Robert E. Fontana, Jr. , Jeffrey S. Lille
- 申请人: Robert E. Fontana, Jr. , Jeffrey S. Lille
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherland BV
- 当前专利权人: Hitachi Global Storage Technologies Netherland BV
- 当前专利权人地址: NL Amsterdam
- 代理机构: Bracewell & Giuliani LLP
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; H04R31/00
摘要:
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.