公开(公告)号：US07990653B2

公开(公告)日：2011-08-02

申请号：US11796196

申请日：2007-04-27

申请人： Masafumi Mochizuki ,  Shuji Nishida ,  Kimitoshi Etoh ,  Isao Nunokawa

发明人： Masafumi Mochizuki ,  Shuji Nishida ,  Kimitoshi Etoh ,  Isao Nunokawa

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/11 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： Embodiments in accordance with the present invention provide a perpendicular recording magnetic head whose dimensional dependency on the nonuniformity of magnetic field strength and distribution during manufacture is minimized, with narrowed tracks and without attenuation or erasure of adjacent track data while maintaining high magnetic field strength. According to one embodiment, a magnetic material (trailing/side shield) for creating a steep gradient of magnetic field strength is provided at a trailing side of a pole tip of a main magnetic pole piece and in a direction of the track width. The magnetic head is formed so that a gap (side gap length “gl”) between a side shield and a throat height portion of the pole tip progressively decreases with an increasing distance from an air-bearing surface, in a direction of an element height. That is, side gap length “gl” (2) at an element height position P2 is made smaller than side gap length “gl” (1) at an air-bearing surface position P1 so as to satisfy a relationship of gl(1)>gl(2).

摘要翻译： 根据本发明的实施例提供一种垂直记录磁头，其在制造期间对磁场强度和分布的不均匀性的尺寸依赖性被最小化，具有变窄的轨迹，并且在保持高磁场强度的同时没有相邻轨道数据的衰减或擦除。 根据一个实施例，用于产生陡峭磁场强度梯度的磁性材料（尾部/侧面屏蔽）设置在主磁极片的磁极尖端的后侧和磁道宽度的方向上。 磁头形成为使得侧挡板和极尖端的喉部高度部分之间的间隙（侧隙长度“gl”）随着与空气轴承表面的距离的增加而逐渐减小，元件高度方向 。 也就是说，使元件高度位置P2处的侧面间隙长度“gl”（2）在空气轴承表面位置P1处小于侧面间隙长度“gl”（1），以满足gl（1） > gl（2）。

公开(公告)号：US07367111B2

公开(公告)日：2008-05-06

申请号：US11340263

申请日：2006-01-25

申请人： Robert E. Fontana, Jr. ,  Jeffrey S. Lille

发明人： Robert E. Fontana, Jr. ,  Jeffrey S. Lille

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F41/302 ,  H01F41/325 ,  H01L29/66984 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

摘要翻译： 自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层 非磁性层，其中绝缘层和非磁性层包括反铁磁材料。 磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。 偏置层位于绝缘层和非磁性层之间。 偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。