发明授权
- 专利标题： Field emission device and manufacturing method thereof
- 专利标题（中）： 场发射装置及其制造方法
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申请号： US11347283申请日： 2006-02-06
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公开(公告)号： US07368306B2公开(公告)日： 2008-05-06
- 发明人: Hideto Ohnuma , Yukie Nemoto
- 申请人： Hideto Ohnuma , Yukie Nemoto
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2002-379977 20021227; JP2002-380101 20021227
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
It is an object to provide techniques for forming a field emission device of a field emission display device with the use of an inexpensive large-sized substrate according to the process that enables improving productivity.A field emission device according to the present invention includes a cathode electrode formed on an insulating surface of a substrate and a convex electron emission portion formed at a surface of the cathode electrode, and the cathode electrode and the electron emission portion include the same semiconductor film. The electron emission portion has a conical shape or a whiskers shape.
公开/授权文献
- US20060141657A1 Field emission device and manufacturing method thereof 公开/授权日：2006-06-29
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