Invention Grant
- Patent Title: Method and apparatus for providing compensation against temperature, process and supply voltage variation
- Patent Title (中): 提供温度，过程和电源电压变化补偿的方法和装置
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Application No.: US11290619Application Date: 2005-11-29
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Publication No.: US07368976B2Publication Date: 2008-05-06
- Inventor: Sushil K. Gupta , Paras Garg
- Applicant: Sushil K. Gupta , Paras Garg
- Applicant Address: IN Uttar Pradesh
- Assignee: STMicroelectronics PVT. Ltd.
- Current Assignee: STMicroelectronics PVT. Ltd.
- Current Assignee Address: IN Uttar Pradesh
- Priority: IN2384/DEL/2004 20041129
- Main IPC: H03K3/01
- IPC: H03K3/01
Abstract:
In the present invention an apparatus and method for providing compensation against temperature, process and supply voltage variation in MOS circuits has been proposed. The invention provides a change in process, temperature and voltage detection circuit, which controls the body bias and the drive of the devices in the CMOS circuit. The detection circuit is independent of any input or internal signal of the CMOS circuit to be controlled.
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