In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to the gate line, and the storage member has a storage line, a first storage electrode, and a second storage electrode. A data member is formed on an active layer. The data member includes a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode and a fourth storage electrode overlapped with the second storage electrode. Thus, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of a display apparatus.