发明授权
- 专利标题: Method for resetting pinned layer magnetization in a magnetoresistive sensor
- 专利标题(中): 在磁阻传感器中复位钉扎层磁化的方法
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申请号: US10857168申请日: 2004-05-28
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公开(公告)号: US07370404B2公开(公告)日: 2008-05-13
- 发明人: Hardayal Singh Gill , Jinshan Li , Kenneth Donald Mackay , Kouichi Nishioka , Andy Cuong Tran
- 申请人: Hardayal Singh Gill , Jinshan Li , Kenneth Donald Mackay , Kouichi Nishioka , Andy Cuong Tran
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/127
- IPC分类号: G11B5/127
摘要:
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
公开/授权文献
- US20050011066A1 Method of resetting AP pinned layers with a canted field 公开/授权日:2005-01-20
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