公开(公告)号：US08810973B2

公开(公告)日：2014-08-19

申请号：US12119961

申请日：2008-05-13

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/39

CPC分类号： G11B5/313 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/091 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  Y10T428/1121

摘要： A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

摘要翻译： 一种磁阻传感器，其使用含Mn的Huesler合金，在使腐蚀和Mn迁移最小化的结构中提高磁阻性能。 该传感器可以被构造成具有包层层结构，其包括Co2MnX和CoFe层的叠层，其中X是Al，Ge或Si。 Co2MnX可以夹在CoFe层之间以防止Mn迁移到间隔物/阻挡层中。 自由层也可以被构造为Co2MnX和CoFe层的叠层，也可以被构造成使Co 2 Mn x层夹在CoFe层之间以防止Mn迁移。

公开(公告)号：US08018691B2

公开(公告)日：2011-09-13

申请号：US12254662

申请日：2008-10-20

申请人： Hardayal Singh Gill ,  Chang-Man Park

发明人： Hardayal Singh Gill ,  Chang-Man Park

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B2005/3996

摘要： A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.

摘要翻译： 具有无剪切层设计且无固定层的磁阻传感器。 该传感器包括第一自由层和第二自由层，其具有以彼此成90度的方向定向的磁化，并且具有与第一自由层反平行耦合的磁化的第三磁性层。 第三磁性层与自由层之一的反平行耦合允许传感器以隧道阀设计使用，在自由层之间具有电绝缘阻挡层。 隧道阀设计减少了传感器中的自旋扭矩噪声，并且第三磁性层的存在允许自由层保持彼此90度的偏压，尽管通过非常薄的阻挡层进行界面耦合。

公开(公告)号：US20110026169A1

公开(公告)日：2011-02-03

申请号：US12510560

申请日：2009-07-28

申请人： Hardayal Singh Gill ,  Wen-Chien David Hsiao ,  Douglas Johnson Werner

发明人： Hardayal Singh Gill ,  Wen-Chien David Hsiao ,  Douglas Johnson Werner

IPC分类号： G11B5/127 ,  B05D5/12

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A dual current-perpendicular-to-plane scissor sensor according to one embodiment includes a middle free layer; two outer free layers positioned on opposite sides of the middle free layer; spacer layers between the middle free layer and each of the outer free layers; and a hard bias layer positioned behind the free layers relative to a media-facing surface of the sensor, wherein the free layers are about magnetostatically balanced.

摘要翻译： 根据一个实施例的双电流垂直平面剪式传感器包括中间自由层; 位于中间自由层的相对侧上的两个外部自由层; 中间自由层和每个外部自由层之间的间隔层; 以及相对于所述传感器的面向媒体的表面定位在所述自由层后面的硬偏置层，其中所述自由层围绕磁静态平衡。

公开(公告)号：US20100103783A1

公开(公告)日：2010-04-29

申请号：US12260924

申请日：2008-10-29

申请人： Hardayal Singh Gill ,  Gurinder Pal Singh ,  Xiaoyu Sui

发明人： Hardayal Singh Gill ,  Gurinder Pal Singh ,  Xiaoyu Sui

IPC分类号： G11B11/00 ,  G11B5/02

CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B5/3967 ,  G11B5/6064 ,  G11B2005/0005 ,  G11B2005/0021

摘要： A magnetic write head arranged to maximize efficiency of an optical device used to locally heat a magnetic medium during use, also to maximize efficiency of a heater element for thermal fly height control. The magnetic head is constructed with a read head, a write head and a slider body. The write head is located between the read head and the slider body. A heater element can be located between the read head and the write head and an optical device such as an optical waveguide can be located between the write head and the slider body. The write head can be constructed to have a write pole that is closer to the slider body than the return pole is, thereby allowing the write pole to be adjacent to the optical device.

摘要翻译： 一种磁性写入头，其布置成使用于在使用期间局部加热磁性介质的光学装置的效率最大化，同时最大化用于热飞行高度控制的加热器元件的效率。 磁头构造有读取头，写入头和滑块体。 写头位于读头和滑块体之间。 加热器元件可以位于读取头和写入头之间，并且诸如光学波导的光学装置可以位于写入头和滑块体之间。 写头可以被构造为具有比返回极更靠近滑块体的写入极，从而允许写入极与光学器件相邻。

公开(公告)号：US07646570B2

公开(公告)日：2010-01-12

申请号：US11496604

申请日：2006-07-31

申请人： Hardayal Singh Gill ,  Jordan Asher Katine ,  Alexander Zeltser

发明人： Hardayal Singh Gill ,  Jordan Asher Katine ,  Alexander Zeltser

IPC分类号： G11B5/39 ,  H04R31/00

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01F41/306 ,  H01F41/308 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.

摘要翻译： 公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。 在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。 然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。 根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。 接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。 在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。 导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。 有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。 通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。

公开(公告)号：US07612970B2

公开(公告)日：2009-11-03

申请号：US11065244

申请日：2005-02-23

申请人： Hardayal Singh Gill ,  Kuok San Ho

发明人： Hardayal Singh Gill ,  Kuok San Ho

IPC分类号： G11B5/39

CPC分类号： G11B5/39

摘要： A magnetoresistive sensor having a free layer biased by an in stack bias layer that comprises a layer of antiferromagnetic material. The bias layer can be IrMnCr, IrMn or some other antiferromagnetic material. The free layer is a synthetic free layer having first and second magnetic layers antiparallel coupled across an AP coupling layer. The first magnetic layer is disposed adjacent to a spacer or barrier layer and the second magnetic layer is exchange coupled with the IrMnCr bias layer. The bias layer biases the magnetic moments of the free layer in desired directions parallel with the ABS without pinning the magnetic moments of the free layer.

摘要翻译： 磁阻传感器，其具有由堆叠偏置层偏置的自由层，该层叠偏压层包括一层反铁磁材料。 偏置层可以是IrMnCr，IrMn或其他一些反铁磁材料。 自由层是具有跨AP耦合层反平行耦合的第一和第二磁性层的合成自由层。 第一磁性层邻近间隔物或阻挡层设置，第二磁性层与IrMnCr偏置层交换耦合。 偏置层在平行于ABS的期望方向上偏置自由层的磁矩，而不会固定自由层的磁矩。

公开(公告)号：US07565733B2

公开(公告)日：2009-07-28

申请号：US11436966

申请日：2006-05-16

申请人： Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara ,  Huey-Ming Tzeng ,  Xiao Z. Wu

发明人： Hardayal Singh Gill ,  Wipul Pemsiri Jayasekara ,  Huey-Ming Tzeng ,  Xiao Z. Wu

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/308 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048

摘要： An improved method for the manufacture of magnetoresistive multilayer sensors is disclosed. The method is particularly advantageous for the production of magnetic tunnel junction (MTJ) sensors, which can be damaged at the air bearing surface by conventional lapping and ion milling. The disclosed process protects the ABS of the magnetoresistive sensor by depositing a diamond like carbon layer which remains in place through ion milling. The DLC layer is removed by oxidation subsequent to the formation of the ABS.

摘要翻译： 公开了用于制造磁阻多层传感器的改进方法。 该方法对于生产磁性隧道结（MTJ）传感器是特别有利的，其可以通过常规研磨和离子铣削在空气轴承表面处损坏。 所公开的方法通过沉积通过离子铣削保持就位的类金刚石碳层来保护磁阻传感器的ABS。 在形成ABS之后，通过氧化去除DLC层。

公开(公告)号：US20080180863A1

公开(公告)日：2008-07-31

申请号：US12100306

申请日：2008-04-09

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/06 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/16

摘要： A magnetic tunnel transistor (MTT) having a pinned layer that has no antiferromagnetic material in an active area of the sensor. The MTT can include a layer of antiferromagnetic material that is exchange coupled with the pinned layer in an area outside of the active area of me sensor, such as outside the track-width, beyond the stripe height, or both outside the track-width and beyond the stripe height. The pinned layer can also be pinned without any exchange coupling at all. In that case, pinning can be assisted by shape enhanced magnetic anisotropy, by extending the pinned layer beyond the stripe height.

摘要翻译： 具有在传感器的有效区域中不具有反铁磁性材料的钉扎层的磁隧道晶体管（MTT）。 MTT可以包括一层反铁磁材料，该层与钉扎层交换耦合在me传感器的有效区域外部的区域内，例如在轨道宽度之外，超出条纹高度，或两者位于轨道宽度之外， 超过条纹高度。 被钉扎层也可以被钉扎而没有任何交换耦合。 在这种情况下，通过将钉扎层延伸超过条纹高度，可以通过形状增强的磁各向异性来辅助钉扎。

公开(公告)号：US07382588B2

公开(公告)日：2008-06-03

申请号：US10856152

申请日：2004-05-28

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic head includes first and second shield layers and a read sensor formed between and in electrical contact with the first and second shield layers. The read sensor includes a free layer structure; an antiparallel (AP) self-pinned structure which includes a first AP self-pinned layer, a second AP self-pinned layer, and an AP coupling layer formed between the first and the second AP self-pinned layers; and a non-magnetic spacer layer formed between the free layer structure and the AP self-pinned structure. The first AP self-pinned layer is formed in both a central region of the read sensor and in side regions adjacent the central region. Since thermal stability of the first AP self-pinned layer is proportional to its volume, extending the first AP self-pinned layer in the side regions improves the thermal stability to reduce the likelihood of amplitude flip in the self-pinned sensor.

摘要翻译： 磁头包括形成在第一和第二屏蔽层之间并且与第一和第二屏蔽层电接触的第一和第二屏蔽层和读取传感器。 读取传感器包括自由层结构; 一个反平行（AP）自固定结构，其包括第一AP自固定层，第二AP自固定层和形成在第一和第二AP自固定层之间的AP耦合层; 以及形成在自由层结构和AP自固定结构之间的非磁性间隔层。 第一AP自固定层形成在读取传感器的中心区域和与中心区域相邻的侧面区域中。 由于第一AP自固定层的热稳定性与其体积成比例，因此在侧面区域中扩展第一AP自固位层可提高热稳定性，以降低自固定传感器中振幅翻转的可能性。

公开(公告)号：US07372674B2

公开(公告)日：2008-05-13

申请号：US11187665

申请日：2005-07-22

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/16

摘要： A magnetic tunnel transistor (MTT) having a pinned layer that is extended in a stripe height direction and is exchange coupled with an antiferromagnetic (AFM) layer in the extended portion outside of the active area of the sensor. Exchange coupling only the extended portion of the pinned layer with the AFM results in strong, robust pinning of the pinned layer while eliminating the AFM layer from the active portion of the sensor. The presence of an AFM layer within the active area of the sensor would result in an extreme loss of hot electrons resulting in a prohibitively large loss of performance. Therefore, eliminating the AFM layer from the active area provides a very large performance enhancement while maintaining robust pinning.

摘要翻译： 一种磁隧道晶体管（MTT），其具有在条高度方向上延伸的钉扎层，并且与传感器的有效区域外的延伸部分中的反铁磁（AFM）层交换耦合。 仅仅将被钉扎层的延伸部分与AFM交换，导致固定层的强大而鲁棒的钉扎，同时从传感器的有效部分消除AFM层。 在传感器的有效区域内AFM层的存在将导致热电子的极度损失，导致性能的极大损失。 因此，从活动区域中消除AFM层提供了非常大的性能提升，同时保持了牢固的固定。