发明授权
- 专利标题: Gas sensor with attenuated drift characteristic
- 专利标题(中): 具有衰减漂移特性的气体传感器
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申请号: US10795529申请日: 2004-03-08
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公开(公告)号: US07370511B1公开(公告)日: 2008-05-13
- 发明人: Ing-Shin Chen , Frank Dimeo, Jr. , Philip S. H. Chen , Jeffrey W. Neuner , James Welch , Bryan Hendrix
- 申请人: Ing-Shin Chen , Frank Dimeo, Jr. , Philip S. H. Chen , Jeffrey W. Neuner , James Welch , Bryan Hendrix
- 申请人地址: DE
- 专利权人: MST Technology GmbH
- 当前专利权人: MST Technology GmbH
- 当前专利权人地址: DE
- 代理机构: Intellectual Property/Technology Law
- 代理商 Steven J. Hultquist
- 主分类号: G01N33/00
- IPC分类号: G01N33/00
摘要:
A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.
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