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    Gas sensor with attenuated drift characteristic
    4.
    发明授权
    Gas sensor with attenuated drift characteristic 有权
    具有衰减漂移特性的气体传感器

    公开(公告)号：US07370511B1

    公开(公告)日：2008-05-13

    申请号：US10795529

    申请日：2004-03-08

    申请人： Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    发明人： Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    IPC分类号： G01N33/00

    CPC分类号： G01N33/005 ,  G01N27/128

    摘要： A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.

    摘要翻译： 具有衰减漂移特性的传感器，包括其中感测层在其至少一个面上具有扩散阻挡材料层的层结构。 传感器例如可以构成为包括形成在微电镀基板上的钯/钇层结构的氢气传感器，钇层和微电镀板之间的铬阻挡层，以及在 钇层和覆盖钯保护层。 气体传感器可用于在易于产生或侵入这种气体的环境中检测目标气体，并且相对于相应的气体传感器在延长的操作中实现了从气体传感器的信号漂移的实质（例如，> 90％）的减小 缺乏本发明的扩散屏障结构。

    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
    7.
    发明申请
    Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
    半导体制造中阻挡材料的MOCVD的前体组成和工艺

    公开(公告)号：US20050042888A1

    公开(公告)日：2005-02-24

    申请号：US10643110

    申请日：2003-08-18

    申请人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    发明人： Jeffrey Roeder ,  Chongying Xu ,  Bryan Hendrix ,  Thomas Baum

    IPC分类号： B05D3/02 ,  C07F7/10 ,  C07F9/00 ,  C07F11/00 ,  C23C16/34 ,  H01L21/285 ,  H01L21/31 ,  H01L21/469 ,  H01L21/768

    CPC分类号： C23C16/45553 ,  C07F7/10 ,  C07F9/005 ,  C07F11/005 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76841

    摘要： Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

    摘要翻译： 下式的金属有机前体：（R1R2N）a-bMXb其中：M是前体金属中心，选自Ta，Ti，W，Nb，Si，Al和B; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1 -C 4烷基，C 3 -C 6环烷基和R 3 Si，其中每个R 0可以是 相同或不同，每个R 0独立地选自H和C 1 -C 4烷基; X选自氯，氟，溴和碘。 这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。 进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4的方法。

    METHOD, APPARATUS AND SYSTEM FOR FORMING DRAINAGE AND TRENCH FORMING SYSTEMS
    10.
    发明申请
    METHOD, APPARATUS AND SYSTEM FOR FORMING DRAINAGE AND TRENCH FORMING SYSTEMS 有权
    方法，形成排水和成型系统的装置和系统

    公开(公告)号：US20080025797A1

    公开(公告)日：2008-01-31

    申请号：US11754512

    申请日：2007-05-29

    申请人： Ralph Brafford ,  Roger Morrow ,  Timothy Wallace ,  Bryan Hendrix

    发明人： Ralph Brafford ,  Roger Morrow ,  Timothy Wallace ,  Bryan Hendrix

    IPC分类号： E02B5/00

    CPC分类号： E03F3/046 ,  E01C19/506 ,  E03F5/0407 ,  E03F5/0408

    摘要： An alignment device is disclosed use in maintaining the alignment of longitudinal frame members of a trench-forming assembly. The alignment device comprises a cross member. Extending in the same direction from opposite ends of the cross member is at least one pair of first lateral extensions. The pair of lateral extensions is spaced apart so as to contact the respective longitudinal frame members of the trench-forming assembly, and thereby maintain the two frame members at a distance relative to each other. The alignment device may further include at least one interior extension extending from the cross member in the same direction as the pair of first lateral extensions. In this embodiment, the interior extension defines a slot between the interior extension and at least one of the first lateral extensions, where the slot is structured is to receive at least a portion of one of the longitudinal frame members.

    摘要翻译： 公开了一种对准装置，用于保持沟槽形成组件的纵向框架构件的对准。 对准装置包括横梁。 从横向构件的相对端向相同方向延伸的是至少一对第一横向延伸部。 这对侧向延伸部分隔开以便与沟槽形成组件的各个纵向框架构件接触，从而将两个框架构件相对于彼此保持一定距离。 对准装置还可以包括至少一个内部延伸部，该内部延伸部分与横向部件沿与该对第一横向延伸部分相同的方向延伸。 在该实施例中，内部延伸部在内部延伸部和至少一个第一侧向延伸部之间限定狭槽，其中，狭槽构造为容纳纵向框架构件中的一个的至少一部分。