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发明授权
US07371622B2 Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant 有权
信号线蚀刻剂和使用蚀刻剂制造薄膜晶体管阵列面板的方法

Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant
摘要：
Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
摘要（中）：

使用单个蚀刻剂对包括下Al-Nd层和上MoW层的栅极线，包括MoW层的数据线和包括IZO层的像素电极进行图案化。 蚀刻剂含有约50-60％的磷酸，约6-10％的硝酸，约15-25％的乙酸，约2-5％的稳定剂的稳定剂和去离子水。 稳定剂包括由M（OH）x L L Y Y表示的氧化氢无机酸，其中M包括Zn，Sn，Cr，Al，Ba，Fe中的至少一种 ，Ti，Si和B，L包括H 2 O，NH 3，CN和NH 2 R中的至少一个（其中R是 烷基），X为2或3，Y为0,1,2或3。

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