公开(公告)号：US08623773B2

公开(公告)日：2014-01-07

申请号：US13438405

申请日：2012-04-03

申请人： Hong-Sick Park ,  Wang-Woo Lee

发明人： Hong-Sick Park ,  Wang-Woo Lee

IPC分类号： H01L21/302

CPC分类号： C09K13/08 ,  C23F1/02 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124

摘要： An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.

摘要翻译： 蚀刻剂包括约50重量％至约70重量％的磷酸，约1重量％至约5重量％的硝酸，约10重量％至约20重量％的乙酸，约0.1 约2重量％的包含唑类化合物和其余水的腐蚀抑制剂。

公开(公告)号：US08507303B2

公开(公告)日：2013-08-13

申请号：US12699764

申请日：2010-02-03

申请人： Hong-Sick Park

发明人： Hong-Sick Park

IPC分类号： H01L21/336

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L51/5228

摘要： The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.

摘要翻译： 本发明提供一种薄膜晶体管阵列面板，其包括绝缘基板，形成在绝缘基板上的栅极线，形成在栅极线上的栅极绝缘层，漏极电极和数据线，该栅极绝缘层上形成有栅极绝缘 层，其中漏电极面对源电极，其间具有间隙，以及连接到漏电极的像素电极。 栅极线，数据线和漏电极中的至少一个包括由导电氧化物制成的第一导电层和与第一导电层相邻沉积的Ag的第二导电层。

公开(公告)号：US08262928B2

公开(公告)日：2012-09-11

申请号：US12777532

申请日：2010-05-11

申请人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

发明人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

IPC分类号： H01L33/44 ,  C09K13/08

CPC分类号： C23F1/26 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458

摘要： An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

摘要翻译： 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。

公开(公告)号：US20120133873A1

公开(公告)日：2012-05-31

申请号：US13193488

申请日：2011-07-28

申请人： Ji-Young PARK ,  Sang Gab Kim ,  Yong-Mo Choi ,  Hyung Jun Kim ,  Sung-Haeng Cho ,  Hong-Sick Park ,  Byeong-Jin Lee ,  Soo-Wan Yoon

发明人： Ji-Young PARK ,  Sang Gab Kim ,  Yong-Mo Choi ,  Hyung Jun Kim ,  Sung-Haeng Cho ,  Hong-Sick Park ,  Byeong-Jin Lee ,  Soo-Wan Yoon

IPC分类号： G02F1/1333 ,  H01L33/16

CPC分类号： H01L27/1288 ,  G02F1/1362 ,  G02F2001/136231 ,  H01L29/41733

摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.

摘要翻译： 制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在 源电极和漏电极。

公开(公告)号：US08163095B2

公开(公告)日：2012-04-24

申请号：US13101973

申请日：2011-05-05

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/50

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US08158470B2

公开(公告)日：2012-04-17

申请号：US13018309

申请日：2011-01-31

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US20110256485A1

公开(公告)日：2011-10-20

申请号：US13167587

申请日：2011-06-23

申请人： Bong-Kyun KIM ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

发明人： Bong-Kyun KIM ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

IPC分类号： G03F7/20 ,  H01L33/62

CPC分类号： C09K13/06 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

摘要翻译： 提出了允许半导体制造工艺的简化和优化的蚀刻剂组合物，以及使用蚀刻剂图案化导电层的方法和使用蚀刻剂制造平板显示器的方法。 除了水之外，蚀刻剂包括硝酸，磷酸，乙酸和乙酸酯化合物。

公开(公告)号：US08021087B2

公开(公告)日：2011-09-20

申请号：US10554687

申请日：2004-03-11

申请人： Chang Hee Choi ,  Hong Sick Park ,  Dae Wi Bae

发明人： Chang Hee Choi ,  Hong Sick Park ,  Dae Wi Bae

IPC分类号： B23B51/00

CPC分类号： B23B51/04 ,  B23B27/141 ,  B23B29/04 ,  B23B29/08 ,  B23B2200/125 ,  B23B2200/202 ,  B23B2200/204 ,  B23B2250/12 ,  B23B2251/408 ,  B23B2260/004 ,  Y10S408/713 ,  Y10T407/23 ,  Y10T408/455 ,  Y10T408/89

摘要： Tool holder assembly (TH) for multifunctional machining, such as drilling, boring, facing, and turning, eliminate interference between facing and turning, and secure an adequate chip groove space (10) for discharging chips therethrough without deterioration of a rigidity of the tool holder (TH), thereby securing a good quality of machining, and an exclusive adapter (TA) suitable to the foregoing tool holder (TH) assembly for multifunctional machining.

摘要翻译： 用于多功能加工的工具架组件（TH），例如钻孔，镗孔，面对和车削，消除面对和车削之间的干扰，并且确保足够的切屑槽空间（10）用于将切屑排出而不会降低工具的刚性 保持器（TH），从而确保良好的机械加工质量，以及适合于用于多功能加工的上述刀架（TH）组件的专用适配器（TA）。

公开(公告)号：US07985982B2

公开(公告)日：2011-07-26

申请号：US12391976

申请日：2009-02-24

申请人： Bong-Kyun Kim ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

发明人： Bong-Kyun Kim ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Ji-Sun Lee ,  Byeong-Jin Lee ,  Kui-Jong Baek ,  Tai-Hyung Rhee ,  Yong-Sung Song

IPC分类号： H01L21/84

CPC分类号： C09K13/06 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

摘要翻译： 提出了允许半导体制造工艺的简化和优化的蚀刻剂组合物，以及使用蚀刻剂图案化导电层的方法和使用蚀刻剂制造平板显示器的方法。 除了水之外，蚀刻剂包括硝酸，磷酸，乙酸和乙酸酯化合物。

公开(公告)号：US07968507B2

公开(公告)日：2011-06-28

申请号：US12214658

申请日：2008-06-20

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/06

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。