System and method for photolithography in semiconductor manufacturing

Invention Grant

US07371671B2 System and method for photolithography in semiconductor manufacturing 有权

Title translation: 半导体制造中的光刻系统和方法

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Patent Title: System and method for photolithography in semiconductor manufacturing
Patent Title (中): 半导体制造中的光刻系统和方法
Application No.: US11050312

Application Date: 2005-02-03
Publication No.: US07371671B2

Publication Date: 2008-05-13
Inventor: Ching-Yu Chang , Chin-Hsiang Lin , Burn Jeng Lin
Applicant: Ching-Yu Chang , Chin-Hsiang Lin , Burn Jeng Lin
Applicant Address: TW Hsin-Shu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Shu
Agency: Haynes Boone, LLP
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/4763

System and method for photolithography in semiconductor manufacturing

Abstract:

A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract(Chinese):

一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

Public/Granted literature

US20060172520A1 System and method for photolithography in semiconductor manufacturing Public/Granted day:2006-08-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）