Invention Grant
US07375388B2 Device having improved surface planarity prior to MRAM bit material deposition
有权
在MRAM钻头材料沉积之前具有改进的表面平面度的装置
- Patent Title: Device having improved surface planarity prior to MRAM bit material deposition
- Patent Title (中): 在MRAM钻头材料沉积之前具有改进的表面平面度的装置
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Application No.: US10734201Application Date: 2003-12-15
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Publication No.: US07375388B2Publication Date: 2008-05-20
- Inventor: Donald L. Yates , Joel A. Drewes
- Applicant: Donald L. Yates , Joel A. Drewes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.
Public/Granted literature
- US20040124485A1 Method of improving surface planarity prior to MRAM bit material deposition Public/Granted day:2004-07-01
Information query
IPC分类:
