发明授权
US07375409B2 Semiconductor device including transistors having different drain breakdown voltages on a single substrate
有权
半导体器件包括在单个衬底上具有不同漏极击穿电压的晶体管
- 专利标题： Semiconductor device including transistors having different drain breakdown voltages on a single substrate
- 专利标题（中）： 半导体器件包括在单个衬底上具有不同漏极击穿电压的晶体管
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申请号： US10892459申请日： 2004-07-15
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公开(公告)号： US07375409B2公开(公告)日： 2008-05-20
- 发明人: Yoko Sato
- 申请人： Yoko Sato
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2003-274551 20030715
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.
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