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    Automatic analysis device
    1.
    发明授权
    Automatic analysis device 有权
    自动分析装置

    公开(公告)号：US09194878B2

    公开(公告)日：2015-11-24

    申请号：US14347450

    申请日：2012-07-31

    申请人： Mitsuru Oonuma ,  Yoko Sato ,  Hajime Yamazaki ,  Akihito Wakui

    发明人： Mitsuru Oonuma ,  Yoko Sato ,  Hajime Yamazaki ,  Akihito Wakui

    IPC分类号： G01N35/10 ,  G01N35/02 ,  G01N21/51 ,  G01N35/04 ,  G01N35/00

    CPC分类号： G01N35/1002 ,  G01N21/51 ,  G01N35/025 ,  G01N2035/00306 ,  G01N2035/00316 ,  G01N2035/0441

    摘要： An automatic analysis device has a light scattering photometer incorporated therein, and improved accuracy resulting from reducing the influences from external light. The automatic analysis device includes a scattered light measurement unit disposed inside the main-body casing, and openable/closable protective covers to cover the top face of the main-body casing. A first protective cover at the center includes a light-shielding part to block external light. The protective covers include see-through parts enabling viewing of the inside. The light-shielding part is configured to cover an area of the reaction disk at least corresponding to the area above the scattered light measurement unit, thus reducing external light leaking into the scattered light measurement unit, and thus removing influences from external light on the scattered light measurement. The protective cover may have a divided structure.

    摘要翻译： 自动分析装置具有并入其中的光散射光度计，并且通过减少来自外部光的影响而提高了精度。 自动分析装置包括设置在主体外壳内的散射光测量单元和可打开/关闭的保护盖，以覆盖主体外壳的顶面。 中心处的第一保护盖包括遮光部分，以遮挡外部光线。 防护罩包括透视部件，可以观看内部。 所述遮光部被构造为至少覆盖所述反射盘的与所述散射光测量单元上方的区域对应的区域，从而减少外部光泄漏到所述散射光测量单元中，从而去除外部光对散射光的影响 光测量。 保护罩可以具有分开的结构。

    Image processing apparatus and method therefor
    5.
    发明授权
    Image processing apparatus and method therefor 有权
    图像处理装置及其方法

    公开(公告)号：US07616360B2

    公开(公告)日：2009-11-10

    申请号：US11460466

    申请日：2006-07-27

    申请人： Ritsuko Otake ,  Shinichi Kato ,  Tsutomu Sakaue ,  Yoko Sato ,  Yoichi Kashibuchi

    发明人： Ritsuko Otake ,  Shinichi Kato ,  Tsutomu Sakaue ,  Yoko Sato ,  Yoichi Kashibuchi

    IPC分类号： G03F3/08 ,  G06F15/00 ,  G06K9/00

    CPC分类号： H04N1/54 ,  H04N1/233 ,  H04N1/2369 ,  H04N1/52

    摘要： When color materials of more than four colors are used, a signal for the amount of toner used within a range appropriate for the apparatus and toner characteristic is generated using a color separation table. However, a printer receives print data of various formats, such as image data separated into signal values of more than four colors, or image data of a special format to which a six-color separation table cannot be applied. Hence, an image signal representing a combination of colors is input. The sum of the signal values of colors in each pixel of the image signal is calculated and compared with a limit value. When the sum exceeds the limit value, the signal values of base colors are replaced with that of a spot color based on a replacement table for replacing the signal values of the base colors with that of the spot color.

    摘要翻译： 当使用四种颜色的颜色材料时，使用分色台产生在适合于该装置的一定范围内的调色剂量和调色剂特性的信号。 然而，打印机接收各种格式的打印数据，例如分割成四种颜色的信号值的图像数据，或不能应用六色分离表的特殊格式的图像数据。 因此，输入表示颜色的组合的图像信号。 计算图像信号的每个像素中的颜色的信号值之和并将其与极限值进行比较。 当总和超过极限值时，基于用于将基色的信号值替换为专色的替换表的基色的信号值被替换为专色。

    Semiconductor device including transistors having different drain breakdown voltages on a single substrate
    6.
    发明授权
    Semiconductor device including transistors having different drain breakdown voltages on a single substrate 有权
    半导体器件包括在单个衬底上具有不同漏极击穿电压的晶体管

    公开(公告)号：US07375409B2

    公开(公告)日：2008-05-20

    申请号：US10892459

    申请日：2004-07-15

    申请人： Yoko Sato

    发明人： Yoko Sato

    IPC分类号： H01L27/088

    CPC分类号： H01L21/76283 ,  H01L27/1203

    摘要： A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.

    摘要翻译： 提供了一种半导体器件，包括支撑衬底，衬底上的绝缘层和绝缘层上的第一半导体层。 在第一半导体层中形成第一高击穿电压晶体管，在绝缘层上形成第二半导体层，在第二半导体层中形成第二高击穿电压晶体管。 到达绝缘层的第一元件隔离区域设置在第一和第二半导体层之间。 在绝缘层上形成第三半导体层，在第三半导体层中形成第一低击穿电压晶体管，在第三半导体层中形成第二低击穿电压晶体管，在第二半导体层中形成第二低击穿电压晶体管， 绝缘层形成在第一和第二低击穿电压晶体管之间的第三半导体层中。 第一元件隔离区域包括双沟槽绝缘层。

    Mass spectrometer
    7.
    发明授权
    Mass spectrometer 有权
    质谱仪

    公开(公告)号：US08664588B2

    公开(公告)日：2014-03-04

    申请号：US13368549

    申请日：2012-02-08

    申请人： Hiroyuki Noda ,  Mitsuru Onuma ,  Yoko Sato ,  Koji Ishiguro ,  Hidetoshi Morokuma ,  Shigeo Otsuki ,  Nami Ibi

    发明人： Hiroyuki Noda ,  Mitsuru Onuma ,  Yoko Sato ,  Koji Ishiguro ,  Hidetoshi Morokuma ,  Shigeo Otsuki ,  Nami Ibi

    IPC分类号： H01J49/00

    CPC分类号： H01J49/0022 ,  H01J49/0013 ,  H05K7/20136

    摘要： In the spectrometer, heavy loads are arranged centrally inside a case having a height smaller than a width, and having a depth smaller than the height. The heavy loads include a vacuum chamber, a vacuum pump which evacuates the vacuum chamber, a sample introduction unit which introduces a sample to be measured and evaporates the sample, an ionization unit which ionizes the evaporated sample and provides it to the vacuum chamber, and an ion detection unit which is connected to the vacuum chamber. Circuit board storage units which store a plurality of circuit boards with a predetermined space therebetween are formed on both sides along a width direction of the case.

    摘要翻译： 在光谱仪中，重负荷被布置在具有小于宽度的高度的壳体的中央内部，并且具有比该高度更小的深度。 重负荷包括真空室，抽空真空室的真空泵，引入待测样品并蒸发样品的样品引入单元，离子化蒸发的样品并将其提供给真空室的离子化单元，以及 离子检测单元，连接到真空室。 在壳体的宽度方向的两侧形成存储有多个电路板的电路板存储单元。

    Image processing method, image processor, storage medium and program
    9.
    发明授权
    Image processing method, image processor, storage medium and program 失效
    图像处理方法，图像处理器，存储介质和程序

    公开(公告)号：US07609414B2

    公开(公告)日：2009-10-27

    申请号：US10995403

    申请日：2004-11-23

    申请人： Shuichi Kumada ,  Yoko Sato

    发明人： Shuichi Kumada ,  Yoko Sato

    IPC分类号： G06F15/00 ,  G03F3/08 ,  G06F3/12

    CPC分类号： H04N1/00222 ,  G06K15/02 ,  G06K15/027 ,  G06K15/1807 ,  H04N1/00015 ,  H04N1/00031 ,  H04N1/00045 ,  H04N1/0005 ,  H04N1/00061 ,  H04N1/00079 ,  H04N1/00087 ,  H04N1/00233 ,  H04N1/00244 ,  H04N1/0035 ,  H04N1/6055

    摘要： In order to obtain consistent output by a remote color printer over a communication network, a calibration is remotely performed on the remote color printer. More specifically, job data, including setting information for a calibration, is received, and the setting for the calibration is switched in accordance with the setting information between performing calibration processing on the job data by using calibration data obtained based on the setting information and performing calibration processing on the job data and job data received after the job data by using calibration data obtained based on the setting information.

    摘要翻译： 为了通过远程彩色打印机通过通信网络获得一致的输出，在远程彩色打印机上远程执行校准。 更具体地，接收包括用于校准的设置信息的作业数据，并且根据通过使用基于设置信息获得的校准数据对作业数据执行校准处理之间的设置信息来切换校准设置，并执行 通过使用基于设置信息获得的校准数据，对作业数据之后接收到的作业数据和作业数据进行校准处理。

    Semiconductor device and method of manufacturing the same
    10.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开

    公开(公告)号：US20070262384A1

    公开(公告)日：2007-11-15

    申请号：US11809963

    申请日：2007-06-04

    申请人： Yoko Sato

    发明人： Yoko Sato

    IPC分类号： H01L27/12 ,  H01L21/84

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/42384 ,  H01L29/78618

    摘要： A semiconductor device comprising a high breakdown voltage transistor and a low breakdown voltage transistor. The semiconductor device comprises a support substrate, an insulating layer formed on the support substrate, a high breakdown voltage transistor, a low breakdown voltage transistor, wherein the high breakdown voltage transistor is adjacent to a first isolation region having a depth that reaches the insulating layer, and the low breakdown voltage transistor is adjacent to a second isolation region having a depth that does not reach the insulating layer.