发明授权
- 专利标题： CMOS devices with improved gap-filling
- 专利标题（中）： 具有改进间隙填充的CMOS器件
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申请号： US11393369申请日： 2006-03-30
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公开(公告)号： US07378308B2公开(公告)日： 2008-05-27
- 发明人: Ju-Wang Hsu , Chih-Hsin Ko , Jyu-Horng Shieh , Baw-Ching Perng , Syun-Ming Jang
- 申请人： Ju-Wang Hsu , Chih-Hsin Ko , Jyu-Horng Shieh , Baw-Ching Perng , Syun-Ming Jang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a second spacer liner. A first stressed film having a first thickness is formed over the first MOS device and directly on the first spacer liner. A second stressed film having a second thickness is formed over the second MOS device and directly on the second spacer liner. The first and the second stressed films may be formed of a same material.
公开/授权文献
- US20070235823A1 CMOS devices with improved gap-filling 公开/授权日：2007-10-11
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