发明授权
- 专利标题: Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
- 专利标题(中): 在基板上形成绝缘膜的方法,半导体装置的制造方法及基板处理装置
-
申请号: US10527642申请日: 2003-09-19
-
公开(公告)号: US07378358B2公开(公告)日: 2008-05-27
- 发明人: Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki
- 申请人: Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-273709 20020919
- 国际申请: PCT/JP03/11971 WO 20030919
- 国际公布: WO2004/027852 WO 20040401
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.