发明授权
US07379342B2 Flash memory device being programmed and verified using voltage higher than target/read threshold voltage to achieve uniform threshold voltage characteristic
失效
使用高于目标/读取阈值电压的电压对闪存器件进行编程和验证，以实现均匀的阈值电压特性
- 专利标题： Flash memory device being programmed and verified using voltage higher than target/read threshold voltage to achieve uniform threshold voltage characteristic
- 专利标题（中）： 使用高于目标/读取阈值电压的电压对闪存器件进行编程和验证，以实现均匀的阈值电压特性
-
申请号： US11304433申请日： 2005-12-14
-
公开(公告)号： US07379342B2公开(公告)日： 2008-05-27
- 发明人: Seong Je Park , Seung Ho Chang
- 申请人： Seong Je Park , Seung Ho Chang
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Townsend and Townsend and Crew LLP
- 优先权： KR10-2005-0045177 20050527
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A program operation and a program verification operation are repeatedly performed. The program verification operation is performed on memory cells including pass cells to obtain a uniform distribution characteristic of a threshold voltage. Furthermore, the program verification operation is performed with a compare voltage being set higher than a target voltage initially so that a threshold voltage of a memory cell is sufficiently higher than the target voltage. The program verification operation is again performed lowering the compare voltage according to the repetition number. Thus, normally programmed cells are prevented from being again excessively programmed.
公开/授权文献
- US20060268620A1 Program method of flash memory device 公开/授权日：2006-11-30
信息查询
