Invention Grant
US07381441B2 Low metal porous silica dielectric for integral circuit applications
有权
用于集成电路应用的低金属多孔石英电介质
- Patent Title: Low metal porous silica dielectric for integral circuit applications
- Patent Title (中): 用于集成电路应用的低金属多孔石英电介质
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Application No.: US10507410Application Date: 2002-04-10
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Publication No.: US07381441B2Publication Date: 2008-06-03
- Inventor: Roger Y. Leung , Eric Deng , Songyuan Xie , Victor Y. Lu
- Applicant: Roger Y. Leung , Eric Deng , Songyuan Xie , Victor Y. Lu
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Roberts & Roberts, LLP
- International Application: PCT/US02/15256 WO 20020410
- International Announcement: WO03/088344 WO 20031023
- Main IPC: B05D3/02
- IPC: B05D3/02
Abstract:
The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
Public/Granted literature
- US20050106376A1 Low metal porous silica dielectric for integral circuit applications Public/Granted day:2005-05-19
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