公开(公告)号：US07381441B2

公开(公告)日：2008-06-03

申请号：US10507410

申请日：2002-04-10

申请人： Roger Y. Leung ,  Eric Deng ,  Songyuan Xie ,  Victor Y. Lu

发明人： Roger Y. Leung ,  Eric Deng ,  Songyuan Xie ,  Victor Y. Lu

IPC分类号： B05D3/02

CPC分类号： C08J9/26 ,  C08J2201/046 ,  C08J2383/04 ,  C09D183/02 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/249953

摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.

摘要翻译： 本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。 使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

公开(公告)号：US06967172B2

公开(公告)日：2005-11-22

申请号：US10680026

申请日：2003-10-07

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L21/316 ,  H01L21/302

CPC分类号： H01L21/02282 ,  H01L21/02203 ,  H01L21/316 ,  H01L21/76837

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

摘要翻译： 使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。 电介质材料特别适用于预金属电介质和浅沟槽隔离应用。 根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。 通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充 ，耐热稳定的，耐蚀刻的介电材料。

公开(公告)号：US06653718B2

公开(公告)日：2003-11-25

申请号：US10188433

申请日：2002-07-03

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L2358

CPC分类号： H01L21/02129 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76224 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

公开(公告)号：US06444495B1

公开(公告)日：2002-09-03

申请号：US09761529

申请日：2001-01-11

申请人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

发明人： Roger Leung ,  Denis Endisch ,  Songyuan Xie ,  Nigel Hacker ,  Yanpei Deng

IPC分类号： H01L2144

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76224 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

摘要翻译： 使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。 电介质材料特别适用于预金属电介质和浅沟槽隔离应用。 根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。 通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充 ，耐热稳定的，耐蚀刻的介电材料。

公开(公告)号：US07011889B2

公开(公告)日：2006-03-14

申请号：US10078919

申请日：2002-02-19

申请人： William B. Bedwell ,  Nigel P. Hacker ,  Roger Y. Leung ,  Nancy Iwamoto ,  Jan Nedbal ,  Songyuan Xie ,  Lorenza Moro ,  Shyama P. Mukherjee

发明人： William B. Bedwell ,  Nigel P. Hacker ,  Roger Y. Leung ,  Nancy Iwamoto ,  Jan Nedbal ,  Songyuan Xie ,  Lorenza Moro ,  Shyama P. Mukherjee

IPC分类号： B32B9/04

CPC分类号： C08G77/04 ,  C08G77/12 ,  G03F7/0751 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76835 ,  Y10T428/265 ,  Y10T428/31663

摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

摘要翻译： 本发明提供了包含至少80重量％的式I的有机硅氧烷：[Y 0.01-1.0 SiO 2 1.5-2] 0.01-1.0 SiO <1.5-2 其中Y是芳基; Z是烯基; a是一级方程式的15％至70％; b是式I的2％至50％; 并且c为式I的20％至80％。本发明的组合物可用于半导体器件，并且可有利地用作蚀刻停止层。