Invention Grant
US07381442B2 Porogens for porous silica dielectric for integral circuit applications 有权
用于集成电路应用的多孔二氧化硅电介质的Porogen

Porogens for porous silica dielectric for integral circuit applications
Abstract:
The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
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