The embodiments of the invention provide a method, etc. for a pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance. More specifically, one method begins by forming a first gate and a second gate on a substrate. Next, an oxide layer is formed on the first and second gates; and, a nitride layer is formed on the oxide layer. Portions of the nitride layer proximate the first gate, portions of the oxide layer proximate the first gate, and portions of the substrate proximate the first gate are removed so as to form source and drain recesses proximate the first gate. Following this, the method removes remaining portions of the nitride layer, including exposing remaining portions of the oxide layer. The removal of the remaining portions of the nitride layer only exposes the remaining portions of the oxide layer and the source and drain recesses.