Self-calibrating anti-blooming circuit for CMOS image sensor having a spillover protection performance in response to a spillover condition

Invention Grant

US07381936B2 Self-calibrating anti-blooming circuit for CMOS image sensor having a spillover protection performance in response to a spillover condition 有权

Title translation: 用于CMOS图像传感器的自校准抗晕电路，具有响应于溢出状态的溢出保护性能

Patent Title: Self-calibrating anti-blooming circuit for CMOS image sensor having a spillover protection performance in response to a spillover condition
Patent Title (中): 用于CMOS图像传感器的自校准抗晕电路，具有响应于溢出状态的溢出保护性能
Application No.: US10975474

Application Date: 2004-10-29
Publication No.: US07381936B2

Publication Date: 2008-06-03
Inventor: Mehmet Ali Tan , Jiafu Luo
Applicant: Mehmet Ali Tan , Jiafu Luo
Applicant Address: US CA Fremont
Assignee: ESS Technology, Inc.
Current Assignee: ESS Technology, Inc.
Current Assignee Address: US CA Fremont
Agency: Farjami & Farjami LLP
Main IPC: H01L27/00
IPC: H01L27/00

Abstract:

A method and apparatus to provide blooming protection for a pixel in an array while extending dynamic range.

Abstract(Chinese):

一种在扩展动态范围的同时为阵列中的像素提供防晕保护的方法和装置。

Public/Granted literature

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）