发明授权
- 专利标题: Voltage controlled oscillator with body of transistors bias control
- 专利标题(中): 具有晶体管偏置控制的压控振荡器
-
申请号: US11534453申请日: 2006-09-22
-
公开(公告)号: US07382206B2公开(公告)日: 2008-06-03
- 发明人: Dong Min Park , Seong Hwan Cho , Tah Joon Park , Yong Il Kwon , Joon Hyung Lim , Myeung Su Kim
- 申请人: Dong Min Park , Seong Hwan Cho , Tah Joon Park , Yong Il Kwon , Joon Hyung Lim , Myeung Su Kim
- 申请人地址: KR Kyungki-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Kyungki-Do
- 代理机构: Lowe Hauptman Ham & Berner
- 优先权: KR10-2005-0095747 20051011
- 主分类号: H03L5/00
- IPC分类号: H03L5/00 ; H03B5/18
摘要:
In a voltage controlled oscillator, a resonant circuit generates a resonant frequency in response to a tuning voltage. A differential oscillator includes first and second transistors differentially cross-coupled to the resonant circuit. The first and second transistors supply energy to the resonant circuit to oscillate the resonant frequency from the resonant circuit, thereby generating first and second oscillation signals having a phase difference of 180 degree. Also, the first and second transistors adjust the first and second oscillation signals to a uniform level in response to a body bias voltage. In addition, an output level detector detects a level of the first and second oscillation signals from the differential oscillator and supplies the body bias voltage corresponding to the detected level to a body of each of the first and second transistors.
公开/授权文献
- US20070080754A1 VOLTAGE CONTROLLED OSCILLATOR WITH BODY BIAS CONTROL 公开/授权日:2007-04-12