Invention Grant
- Patent Title: Method of defect inspection
- Patent Title (中): 缺陷检查方法
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Application No.: US10904873Application Date: 2004-12-01
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Publication No.: US07382451B2Publication Date: 2008-06-03
- Inventor: Long-Hui Lin , Chia-Yun Chen
- Applicant: Long-Hui Lin , Chia-Yun Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Powerchip Semiconductor Corp.
- Current Assignee: Powerchip Semiconductor Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW93113094A 20040510
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A plurality of cassettes, each having a plurality of wafers respectively having a first defect information, is selected. Each of the cassettes is then assigned to a corresponding tool having at least one reaction chamber, and the wafers are substantially equally assigned to the reaction chambers. A first process is then performed on each of the wafers in the reaction chamber. Finally, a first defect inspection process is performed on each of the wafers.
Public/Granted literature
- US20050248756A1 METHOD OF DEFECT INSPECTION Public/Granted day:2005-11-10
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