发明授权
US07384715B2 Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
有权
用移相器层和强度平衡器层形成EUV掩模
- 专利标题： Forming an EUV mask with a phase-shifter layer and an intensity balancer layer
- 专利标题（中）： 用移相器层和强度平衡器层形成EUV掩模
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申请号： US11450098申请日： 2006-06-09
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公开(公告)号： US07384715B2公开(公告)日： 2008-06-10
- 发明人: Sang Hun Lee
- 申请人： Sang Hun Lee
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 George Chen
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
The present invention describes a method including: providing a substrate, the substrate including a first region and a second region; forming a multilayer mirror over the substrate; forming a phase-shifter layer over the multilayer mirror; forming a capping layer over the phase-shifter layer; removing the capping layer and the phase-shifter layer in the second region; illuminating the first region and the second region with EUV light; and reflecting the EUV light off the first region and the second region. The present invention also describes a structure including: a substrate, the substrate including a first region and a second region; a multilayer mirror located over the first region and the second region; a phase-shifter layer located over the multilayer mirror in the region; an intensity balancer layer located over the multilayer mirror in the second region; and a capping layer located over the phase-shifter layer in the first region and over the intensity balancer layer in the second region.
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