发明授权
- 专利标题： Method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications
- 专利标题（中）： 在应变硅CMOS应用中分离硅锗位错区的方法
-
申请号： US11073185申请日： 2005-03-03
-
公开(公告)号： US07384837B2公开(公告)日： 2008-06-10
- 发明人: Sheng Teng Hsu , Jong-Jan Lee , Douglas J. Tweet , Jer-shen Maa
- 申请人： Sheng Teng Hsu , Jong-Jan Lee , Douglas J. Tweet , Jer-shen Maa
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method forms a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 Å; forms a second layer of relaxed SiGe overlying the substrate and adjacent to the first layer of SiGe, having a thickness of less than 5000 Å; forms a layer of strained-Si overlying the first and second SiGe layers; forms a shallow trench isolation region interposed between the first SiGe layer and the second SiGe layer; forms an p-well in the substrate and the overlying first layer of SiGe; forming forms a p-well in the substrate and the overlying second layer of SiGe; forms channel regions, in the strained-Si, and forms PMOS and NMOS transistor source and drain regions.
公开/授权文献
信息查询
IPC分类:
