发明授权
US07384849B2 Methods of forming recessed access devices associated with semiconductor constructions
有权
形成与半导体结构相关联的凹陷接入设备的方法
- 专利标题: Methods of forming recessed access devices associated with semiconductor constructions
- 专利标题(中): 形成与半导体结构相关联的凹陷接入设备的方法
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申请号: US11090529申请日: 2005-03-25
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公开(公告)号: US07384849B2公开(公告)日: 2008-06-10
- 发明人: Kunal R. Parekh , Suraj Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- 申请人: Kunal R. Parekh , Suraj Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
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