发明授权
- 专利标题： Resistor integration structure and technique for noise elimination
- 专利标题（中）： 电阻集成结构和噪声消除技术
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申请号： US11553270申请日： 2006-10-26
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公开(公告)号： US07384855B2公开(公告)日： 2008-06-10
- 发明人: Rajneesh Jaiswal , H. Jerome Barber , Thomas E. Kuehl
- 申请人： Rajneesh Jaiswal , H. Jerome Barber , Thomas E. Kuehl
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.
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