Invention Grant
- Patent Title: ESD protection for high voltage applications
- Patent Title (中): ESD保护用于高压应用
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Application No.: US10950844Application Date: 2004-09-27
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Publication No.: US07385252B2Publication Date: 2008-06-10
- Inventor: Jian-Hsing Lee , Deng-Shun Chang
- Applicant: Jian-Hsing Lee , Deng-Shun Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes Boone, LLP
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein both the diode and the NMOS are coupled to an input device, and at least a portion of the diode and at least a portion of the NMOS device collectively form an ESD protection device.
Public/Granted literature
- US20060065931A1 ESD protection for high voltage applications Public/Granted day:2006-03-30
Information query
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