发明授权
US07385260B2 Semiconductor device having silicide thin film and method of forming the same
有权
具有硅化物薄膜的半导体器件及其形成方法
- 专利标题： Semiconductor device having silicide thin film and method of forming the same
- 专利标题（中）： 具有硅化物薄膜的半导体器件及其形成方法
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申请号： US10830390申请日： 2004-04-21
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公开(公告)号： US07385260B2公开(公告)日： 2008-06-10
- 发明人: Hyung-Shin Kwon , Joon-Yong Joo , Kwang-Ok Koh , Sung-Bong Kim
- 申请人： Hyung-Shin Kwon , Joon-Yong Joo , Kwang-Ok Koh , Sung-Bong Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger, Johnson & McCollom, P.C.
- 优先权： KR2001-14004 20010319
- 主分类号： H01L29/861
- IPC分类号： H01L29/861
摘要：
The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.
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