Invention Grant
US07385260B2 Semiconductor device having silicide thin film and method of forming the same
有权
具有硅化物薄膜的半导体器件及其形成方法
- Patent Title: Semiconductor device having silicide thin film and method of forming the same
- Patent Title (中): 具有硅化物薄膜的半导体器件及其形成方法
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Application No.: US10830390Application Date: 2004-04-21
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Publication No.: US07385260B2Publication Date: 2008-06-10
- Inventor: Hyung-Shin Kwon , Joon-Yong Joo , Kwang-Ok Koh , Sung-Bong Kim
- Applicant: Hyung-Shin Kwon , Joon-Yong Joo , Kwang-Ok Koh , Sung-Bong Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger, Johnson & McCollom, P.C.
- Priority: KR2001-14004 20010319
- Main IPC: H01L29/861
- IPC: H01L29/861
Abstract:
The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.
Public/Granted literature
- US20040198032A1 Semiconductor device having silicide thin film and method of forming the same Public/Granted day:2004-10-07
Information query
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