利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07385279B2 Semiconductor device and a method of manufacturing the same 失效
半导体装置及其制造方法

Semiconductor device and a method of manufacturing the same
摘要：
A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET (70) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (29), a plurality of outer leads (37), (38) protruding in parallel from the same lateral surface of the resin encapsulant (29) and a header (28) bonded to a back surface of the semiconductor pellet and having a header protruding portion (28c) protruding from a lateral surface of the resin encapsulant (29) opposite to the lateral surface from which the outer leads protrude, wherein the header (28) has an exposed surface (28b) exposed from the resin encapsulant (29); the outer leads (37), (38) are bent; and the exposed of the outer leads (37), (38) are provided at substantially the same height.
摘要（中）：

具有高输出并且具有降低的外部电阻的半导体器件和方法被降低并且改善了辐射性能。 MOSFET（70）具有用于电连接半导体芯片的表面电极和多个内部引线的连接部分，树脂密封剂（29），与外部引线平行突出的多个外部引线（37），（38） 树脂密封剂（29）的相同的侧表面和接合到半导体芯片的后表面的集管（28），并且具有从树脂密封剂（29）的与该树脂密封剂相对的侧表面突出的集管突出部分 外引线突出的侧表面，其中集管（28）具有从树脂密封剂（29）暴露的暴露表面（28b）; 外引线（37），（38）弯曲; 并且暴露的外引线（37），（38）设置在基本相同的高度。

公开/授权文献
信息查询
Espacenet
0/0