发明授权
- 专利标题： Silicon carbide single crystal and method and apparatus for producing the same
- 专利标题（中）： 碳化硅单晶及其制造方法和装置
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申请号： US10558369申请日： 2004-05-28
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公开(公告)号： US07387679B2公开(公告)日： 2008-06-17
- 发明人: Takayuki Maruyama , Yoshinori Kobayashi , Takuya Monbara
- 申请人： Takayuki Maruyama , Yoshinori Kobayashi , Takuya Monbara
- 申请人地址： JP Tokyo
- 专利权人： Bridgestone Corporation
- 当前专利权人： Bridgestone Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2003-154616 20030530
- 国际申请： PCT/JP2004/007775 WO 20040528
- 国际公布： WO2004/106596 WO 20041209
- 主分类号： C30B25/12
- IPC分类号： C30B25/12 ; C30B25/14
摘要：
A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.