Method for manufacturing CMOS image sensor

Invention Grant

US07387926B2 Method for manufacturing CMOS image sensor 有权

Title translation: CMOS图像传感器的制造方法

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Patent Title: Method for manufacturing CMOS image sensor
Patent Title (中): CMOS图像传感器的制造方法
Application No.: US11148212

Application Date: 2005-06-09
Publication No.: US07387926B2

Publication Date: 2008-06-17
Inventor: Chang Hun Han
Applicant: Chang Hun Han
Applicant Address: KR Seoul
Assignee: Dongbu Electronics Co., Ltd.
Current Assignee: Dongbu Electronics Co., Ltd.
Current Assignee Address: KR Seoul
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: KR10-2004-0042207 20040609
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/00 ; H01L21/302 ; H01L21/469

Method for manufacturing CMOS image sensor

Abstract:

A method for manufacturing a CMOS image sensor is provided. The method includes forming a gate electrode on a semiconductor layer having defined regions of a photodiode region and a logic region, such that a gate oxide film is interposed between the semiconductor layer and the gate electrode; forming sidewall insulating films at both sides of the gate electrode, followed by forming a salicide-preventing film over an overall surface of the gate electrode and insulating films; removing the salicide-preventing film formed in the logic region; and removing a portion of the sidewall insulating films exposed by removing the salicide-preventing film, thereby exposing an upper side surface of the gate electrode.

Abstract(Chinese):

提供了一种用于制造CMOS图像传感器的方法。该方法包括在具有光电二极管区域和逻辑区域的限定区域的半导体层上形成栅电极，使得栅极氧化膜插入在半导体层和栅电极之间; 在栅电极的两侧形成侧壁绝缘膜，然后在栅电极和绝缘膜的整个表面上形成防止防止防水膜; 去除形成在逻辑区域中的防自杀剂膜; 以及通过去除防止自杀化膜的方法去除暴露的侧壁绝缘膜的一部分，从而露出栅电极的上侧表面。

Public/Granted literature

US20050277239A1 Method for manufacturing CMOS image sensor Public/Granted day:2005-12-15

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS