发明授权
- 专利标题: Method of fabricating a bottle trench and a bottle trench capacitor
- 专利标题(中): 制造瓶沟槽和瓶槽电容器的方法
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申请号: US11458120申请日: 2006-07-18
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公开(公告)号: US07387930B2公开(公告)日: 2008-06-17
- 发明人: Oh-Jung Kwon , Kenneth T. Settlemyer, Jr. , Ravikumar Ramachandran , Min-Soo Kim
- 申请人: Oh-Jung Kwon , Kenneth T. Settlemyer, Jr. , Ravikumar Ramachandran , Min-Soo Kim
- 申请人地址: US NY Armonk US CA San Jose DE Munich
- 专利权人: International Business Machines Corporation,Infineon Technologies North America Corp.,Infineon Technologies AG
- 当前专利权人: International Business Machines Corporation,Infineon Technologies North America Corp.,Infineon Technologies AG
- 当前专利权人地址: US NY Armonk US CA San Jose DE Munich
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Steven Capella
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.