Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11404670Application Date: 2006-04-13
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Publication No.: US07387941B2Publication Date: 2008-06-17
- Inventor: Eun Sung Lee
- Applicant: Eun Sung Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2006-0006968 20060123
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/44
Abstract:
A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention provides a channel region formed over a device isolation structure to form a semiconductor device including a SOI (Silicon-on-Insulator) channel structure, thereby decreasing ion implanting concentration of a channel region and improving tWR (Write Recovery time) and LTRAS (Long Time for Row Address Strobe) characteristics of the device.
Public/Granted literature
- US20070173005A1 Method for fabricating semiconductor device Public/Granted day:2007-07-26
Information query
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