发明授权
- 专利标题: Field effect transistor and method for manufacturing the same
- 专利标题(中): 场效应晶体管及其制造方法
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申请号: US11454721申请日: 2006-06-16
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公开(公告)号: US07387955B2公开(公告)日: 2008-06-17
- 发明人: Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
- 申请人: Ho Kyun Ahn , Jong Won Lim , Jae Kyoung Mun , Hong Gu Ji , Woo Jin Chang , Hea Cheon Kim
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Ladas and Parry LLP
- 优先权: KR10-2005-0104958 20051103
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.