发明授权
- 专利标题： Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device
- 专利标题（中）： 半导体装置，半导体装置的制造方法以及具备该半导体装置的便携式电子装置
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申请号： US10592034申请日： 2005-03-07
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公开(公告)号： US07388245B2公开(公告)日： 2008-06-17
- 发明人: Fujio Masuoka , Takashi Yokoyama , Takuji Tanigami , Shinji Horii
- 申请人： Fujio Masuoka , Takashi Yokoyama , Takuji Tanigami , Shinji Horii
- 申请人地址： JP Miyagi JP Osaka
- 专利权人： Fujio Masuoka,Sharp Kabushiki Kaisha
- 当前专利权人： Fujio Masuoka,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Miyagi JP Osaka
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2004-067644 20040310
- 国际申请： PCT/JP2005/003906 WO 20050307
- 国际公布： WO2005/088703 WO 20050922
- 主分类号： H01L29/423
- IPC分类号： H01L29/423
摘要：
A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.
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