Invention Grant
US07389203B2 Method and apparatus for deciding cause of abnormality in plasma processing apparatus
有权
用于确定等离子体处理装置中的异常原因的方法和装置
- Patent Title: Method and apparatus for deciding cause of abnormality in plasma processing apparatus
- Patent Title (中): 用于确定等离子体处理装置中的异常原因的方法和装置
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Application No.: US10849307Application Date: 2004-05-20
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Publication No.: US07389203B2Publication Date: 2008-06-17
- Inventor: Hideki Tanaka
- Applicant: Hideki Tanaka
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farrabow, Garrett & Dunner, L.L.P.
- Priority: JP2003-143887 20030521
- Main IPC: G06F15/00
- IPC: G06F15/00 ; G06F11/30

Abstract:
Analysis data constituted by a plurality of parameters is acquired on the basis of detection values obtained in processes for an object to be processed from a detector arranged in a plasma processing apparatus. With respect to parameters of analysis data decided as abnormal data, as a degree of influence on abnormality, a contribution to, e.g., a residual score is calculated (degree-of-influence calculating step). Contributions of the parameters are set at 0 or a value close to 0 in a descending order of contribution of the parameters to sequentially calculate residual scores, and, when the residual scores are not more than a predetermined value, the parameters having the contributions which are set at 0 or a value close to 0 until now as parameters which cause abnormality (cause-of-abnormality deciding step).
Public/Granted literature
- US20050006344A1 Method and apparatus for deciding cause of abnormality in plasma processing apparatus Public/Granted day:2005-01-13
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