发明授权
- 专利标题: Diamond substrate and manufacturing method thereof
- 专利标题(中): 金刚石基板及其制造方法
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申请号: US11390333申请日: 2006-03-28
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公开(公告)号: US07390695B2公开(公告)日: 2008-06-24
- 发明人: Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
- 申请人: Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
- 申请人地址: JP Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-090607 20050328; JP2005-091897 20050328; JP2005-133870 20050502; JP2005-293130 20051006
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.
公开/授权文献
- US20060213428A1 Diamond substrate and manufacturing method thereof 公开/授权日:2006-09-28
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