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公开(公告)号：US20060213428A1
公开(公告)日：2006-09-28
申请号：US11390333
申请日：2006-03-28
IPC分类号： C30B25/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others. The manufacturing method for a diamond substrate of the present invention comprises: the mounting step of preparing a substrate having a main face comprising a first region which is a concave and having a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; a connecting step of forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and a polishing step of polishing to substantially flatten both the CVD diamond layers on the single crystalline diamond seed substrate and on the second region by mechanically polishing.
摘要翻译： 本发明提供了通过适用于半导体光刻处理的方法制造的大规模金刚石基板和基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片处理和反馈装置 ， 和别的。 本发明的金刚石基板的制造方法包括：准备基板的安装步骤，所述基板具有主面，所述主面包括第一区域，所述第一区域是凹形的并且具有围绕所述第一区域的第二区域，并且安装在所述第一区域 ，具有厚于所述第一区域的凹入深度的板厚度的单晶金刚石种子基板; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层并且通过在所述第二区域上同时形成CVD金刚石层来相互连接的连接步骤; 以及抛光步骤，通过机械抛光在单晶金刚石种子基底上和第二区域上基本上平坦化CVD金刚石层。
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公开(公告)号：US07390695B2
公开(公告)日：2008-06-24
申请号：US11390333
申请日：2006-03-28
IPC分类号： H01L21/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.
摘要翻译： 适用于半导体光刻处理的大规模金刚石基板和所制造的基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片加工，反馈装置等。 本发明的制造方法包括：准备具有包括第一区域的第一区域的主面和包围第一区域的第二区域的基板，以及在第一区域上安装具有第一区域的单晶金刚石种子基板 板厚度比第一区域的凹深更厚; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层，并且通过在所述第二区域上同时形成CVD金刚石层来相互连接; 并通过机械研磨抛光以使CVD金刚石层和第二区域基本平坦化。
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公开(公告)号：US07524372B2
公开(公告)日：2009-04-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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4.发明授权Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权金刚石单晶衬底制造方法和金刚石单晶衬底公开(公告)号：US07481879B2
公开(公告)日：2009-01-27
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译： 一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在 将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。
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5.发明申请公开(公告)号：US20050139150A1
公开(公告)日：2005-06-30
申请号：US10980152
申请日：2004-11-04
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要翻译： 一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离 从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向 衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶 使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。
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6.发明授权Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译： 一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比 为3％以上，主偏离角为0.50°以上的主表面。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。
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公开(公告)号：US07807126B2
公开(公告)日：2010-10-05
申请号：US12364609
申请日：2009-02-03
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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公开(公告)号：US07655208B2
公开(公告)日：2010-02-02
申请号：US11402062
申请日：2006-04-12
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
摘要翻译： 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为 在整个单晶金刚石上，相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm，并且还有一种用于制造金刚石的方法 。
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9.发明申请Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate 有权金刚石单晶基板的制造方法和金刚石单晶基板公开(公告)号：US20060216220A1
公开(公告)日：2006-09-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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公开(公告)号：US20050211159A1
公开(公告)日：2005-09-29
申请号：US11055973
申请日：2005-02-14
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/18 , C30B29/04 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B28/06 , C30B28/12 , C30B28/14
摘要： A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 μm is deviated by +0.5 cm−1 or more to +3.0 cm−1 or less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by −1.0 cm−1 or more to less than +0.5 cm−1 from the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.
摘要翻译： 通过气相生长法获得的菱形单晶基板，其中通过微观拉曼光谱测量的金刚石单晶衬底表面的金刚石固有拉曼位移具有2μm激发光的聚焦光束直径偏离+0.5cm 在不大于0的区域（区域A）中，与无应变金刚石的标准拉曼位移量相比，超过-1.0以上至+ 3.0cm -1以下 ％至不大于25％的表面，并且与标准拉曼位移量偏离-1.0cm -1以上至小于+0.5cm -1以下 的无应变金刚石，在区域A以外的表面的区域（区域B）中。金刚石单晶基板可以以大尺寸，高品质而不破裂地获得，并且适用于半导体材料，电子部件， 和光学部件等。
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