发明授权
- 专利标题： Method and system for lattice space engineering
- 专利标题（中）： 格子空间工程方法与系统
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申请号： US11104298申请日： 2005-04-11
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公开(公告)号： US07390724B2公开(公告)日： 2008-06-24
- 发明人: Francois J. Henley , Philip James Ong , Igor J. Malik
- 申请人： Francois J. Henley , Philip James Ong , Igor J. Malik
- 申请人地址： US CA San Jose
- 专利权人： Silicon Genesis Corporation
- 当前专利权人： Silicon Genesis Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46
摘要：
A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
公开/授权文献
- US20050233545A1 Method and system for lattice space engineering 公开/授权日：2005-10-20